3N213: 360mW Dual gate mosfet

3N213
Product Description

This Dual gate mosfet diode is packaged in TO-72 package, which has a power dissipation of 360mW.

Available as High Reliability device per MIL-PRF-19500 indicate –HR suffix after the part number. Contact for -HR flow. Add "PBF" suffix for Pb-free lead finish.

Applications
Dual Gate Mosfets are used in VHF and UHF amplifier circuits.